Gate Oxides Grown on Deuterium-Implanted Silicon Substrate
نویسندگان
چکیده
Thin oxides (4 nm) grown on deuterium-implanted silicon substrates were investigated for the first time. It was observed that deuterium implantation at a light dose of 1 x 1014/cm2 at 25 keV significantly reduced the leakage current through the oxide. A reduction in electron trap density has also been observed for this oxide. An increase in leakage current, observed for both higher and lower energy deuterium implants, was possibly because of enhanced substrate damage and out-diffusion of deuterium, respectively. Deuterium-implanted oxide, subjected to N2O annealing, showed further improvement in electrical characteristics. © 1999 The Electrochemical Society. S1099-0062(99)07-091-1. All rights reserved.
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